| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state imaging apparatus and a method for manufacturing the same, and a semiconductor device and a method for manufacturing the same, in which a semiconductor substrate can be formed into a thin film without use of an SOI substrate and cost is reduced. Ž<P>SOLUTION: A semiconductor substrate 21 has an imaging area in which pixels configured by a photoelectric conversion element PD and a plurality of metal oxide semiconductor (MOS) transistors Tr1 are arrayed, a peripheral circuit, and columnar end detecting sections 63 formed on both outer sides sandwiching the imaging area. The end detecting sections 63 is formed in the thickness direction from the front surface of the semiconductor substrate and has hardness greater than that of the semiconductor substrate. The semiconductor substrate is formed into a thin film by chemical mechanical polishing from the rear surface to a position at which the end detecting sections 63 are exposed. The MOS transistors are formed on the front surface of the semiconductor substrate, and incident light is received from the rear surface of the semiconductor substrate. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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