发明名称 TEST CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME
摘要 PURPOSE: A test circuit and a semiconductor memory device having the same are provided to supply a test mode for setting optimized sensing speed and sensing sensitivity by adjusting an inclination of first and second sense amp bias voltages according to first and second test mode signals. CONSTITUTION: A first driving part(30) pulls up and drives a first sense amplifier bias voltage in response to a first test signal and a first control signal. A second driver part(32) pulls down and drives a second sense amplifier bias voltage in response to a second test signal and a second controlling signal. The first driving part comprises a transfer device transferring the first control signal in response to the first test signal.
申请公布号 KR20100050012(A) 申请公布日期 2010.05.13
申请号 KR20080109089 申请日期 2008.11.04
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG, SUN YOUNG;PARK, SANG IL
分类号 G11C11/4091;G11C11/4074;G11C29/00 主分类号 G11C11/4091
代理机构 代理人
主权项
地址