| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to input the light refracted by a light refraction unit into each photo diode by forming the light refraction unit around an optical waveguide path. CONSTITUTION: A semiconductor substrate includes a photo diode(20) arranged for each unit pixel. An interlayer insulation layer includes a metal wiring(40) arranged on the semiconductor substrate. A light refraction unit(60) is formed around the path of the light inputted to the photo diode. The light refraction unit has a lower refractive index than that of the interlayer insulation layer. The light refraction unit includes a ZnO ion or Ti ion diffused region on the interlayer insulation layer.
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