发明名称 |
THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICES HAVING SUB-DIVIDED ACTIVE BARS AND METHODS OF MANUFACTURING SUCH DEVICES |
摘要 |
Nonvolatile memory devices are provided and methods of manufacturing such devices. In the method, conductive layers and insulating layers are alternatingly stacked on a substrate. A first sub-active bar is formed which penetrates a first subset of the conductive layers and a first subset of the insulating layers. The first sub-active bar is electrically connected with the substrate. A second sub-active bar is formed which penetrates a second subset of the conductive layers and a second subset of the insulating layers. The second sub-active bar is electrically connected to the first sub-active bar. A width of a bottom portion of the second sub-active bar is less than a width of a top portion of the second sub-active bar.
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申请公布号 |
US2010109065(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20090612125 |
申请日期 |
2009.11.04 |
申请人 |
OH JIN-YONG;LEE WOONKYUNG;LEE JIN-SUNG;SHIM SUNIL;KIM HANSOO;CHO WONSEOK;JANG JAEHOON;LIM JIN-SOO |
发明人 |
OH JIN-YONG;LEE WOONKYUNG;LEE JIN-SUNG;SHIM SUNIL;KIM HANSOO;CHO WONSEOK;JANG JAEHOON;LIM JIN-SOO |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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地址 |
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