METHOD OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming patterns for a semiconductor device is provided to reduce manufacturing costs by without adding a photolithography process because of the width difference between patterns. CONSTITUTION: A dual mask layer is formed on a substrate(300). A first etching mask pattern and a second etch mask pattern are formed on a dual mask layer. The first and second mark pattern are formed simultaneously by etching dual mask layer. The first etch mask pattern is removed. A first spacer(350A) and a second spacer(350B) are at the same time formed. The first mask pattern is removed. The substrate is etched.