| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a normally-off type HEMT having a high breakdown voltage, an excellent switching speed, and high frequency characteristics. Ž<P>SOLUTION: The normally-off type HEMT includes: a main semiconductor area including a first nitride semiconductor layer 2 having a first band gap and a second nitride semiconductor layer 3 having a second band gap larger than the first band gap and a hetero-junction onto the first nitride semiconductor layer; a source electrode 5 formed on the main semiconductor area; a drain electrode 6 formed apart from the source electrode 5 on the main semiconductor area; a third nitride semiconductor layer 10 formed between the source electrode 5 and the drain electrode 6 on the first nitride semiconductor layer; and a gate electrode 7 formed on the third nitride semiconductor layer 10, wherein the third nitride semiconductor layer 10 has a third band gap smaller than the first band gap. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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