WIRE BONDING METHOD AND SEMICONDUCTOR DEVICE

摘要

A wire bonding method includes a first bonding step, a wire press-in step and a second bonding step. In the first bonding step, an initial ball formed at the leading end of a wire is bonded to a first bonding point (11) by a capillary to form a pressure bonding ball (12). In the wire press-in step, continuous operation of bringing up the capillary substantially vertical and then diagonally bringing down the capillary toward a second bonding point (19) by a quantity smaller than the quantity the capillary is brought up is repeated a plurality of times to press-in the wire at a plurality of positions toward the second bonding point (19). In the second bonding step, the capillary is brought up, then moved toward the second bonding point (19), and the wire is bonded to the second bonding point (19) with pressure. Thus, in bonding the wire to the first bonding point and the second bonding point, height of wire loop is reduced, while suppressing deterioration of wire strength.