| 摘要 |
A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum &Sgr;X of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum &Sgr;Y of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality &Sgr;X/&Sgr;Y>1.0.
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