| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to improve the mobility of electrons by performing a surface treatment process with a chemical to the surface of a wafer which is damaged during a cleaving process. CONSTITUTION: A carrier substrate including an image sensor(200) is formed. The carrier substrate is bonded to a semiconductor substrate(100) to form the image sensor on an interlayer insulation layer(160). The carrier substrate is removed to expose the image sensor in a cleaving process. An etching process with a chemical is performed to the exposed surface of the image sensor. The surface of the image sensor is planarized. The exposed surface of the image sensor has a first crystal orientation(1,0,0) and a second crystal orientation(1,1,1). The etching rate of the first crystal orientation is higher than that of the second crystal orientation.
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