发明名称 THE HYBRID DOUBLE QUANTUM DISK STRUCTURE WITH DILUTED MAGNETIC SEMICONDUCTORS AND NON-MAGNETIC SEMICONDUCTORS, AND THE MANIPULATION STRUCTURE OF SPIN STATE BY USING ENERGY LEVEL-CROSSING PHENOMENA IN DILUTED MAGNETIC SEMICONDUCTOR QUANTUM DOTS ACCORDING TO MAGNETIC FIELD VARIATION IN ABOVE AND THE METHOD THEREOF
摘要 PURPOSE: A hybrid double quantum disc structure and a spin quantum state control structure and method are provided to change the location of a charge in the hybrid double quantum disc structure using tunneling phenomenon. CONSTITUTION: A hybrid double quantum disc structure is composed of a nanorod or nanowire, a diluted magnetic semiconductor(DMS) disc, and a non-magnetic semiconductor disc. The nanorod or nanowire is grown with a semiconductor. The diluted magnetic semiconductor disc is inserted in the lower end of the nanorod or nanowire. The non-magnetic semiconductor disc is inserted in the upper end of the nanorod or nanowire. A given interval is formed between the diluted magnetic semiconductor disc and non-magnetic semiconductor disc.
申请公布号 KR20100039580(A) 申请公布日期 2010.04.16
申请号 KR20080098603 申请日期 2008.10.08
申请人 SNU R&DB FOUNDATION;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HEE SANG;KIM, NAM MEE
分类号 G11B7/26;G11B5/62 主分类号 G11B7/26
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