发明名称 COMPOSITION FOR PLATING COPPER AND METHOD OF FORMING A COPPER WIRING USING THE SAME
摘要 PURPOSE: Composition for plating copper and a method for copper wiring using the same are provided to reduce the generation frequency of voids and extend service life of the composition plating copper by using disulfide compound as accelerating agent. CONSTITUTION: A method for copper wiring using composition for plating copper comprises following steps. An insulating layer with recesses is formed on a substrate(200). An electroplating process is enabled using electroplating process for plating copper. A copper layer for filling the recess is formed on the insulating layer. The composition for plating copper comprises disulfide compound. The disulfide compound is used as the accelerating agent.
申请公布号 KR20100038576(A) 申请公布日期 2010.04.15
申请号 KR20080097600 申请日期 2008.10.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, MYUNG BEOM;JIN, HYE YOUNG;LEE, JIN SEO;CHA, HYE JIN;CHOI, JUNG SIK;LEE, JUNG HO;LEE, KI HAG
分类号 C25D3/38;C25D7/12 主分类号 C25D3/38
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