| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that a light emission diode using GaN and InGaN has the variations of currents (I)-voltage (V) characteristics, and all particle-shaped light emission diode elements are connected in parallel with electrodes when arranging on the same electrode, and driving at the same time a plurality of particle-shaped light emission diode elements, so that any variation is generated in current quantity flowing in each element caused by the variations of I-V chracteristics. <P>SOLUTION: A light emission device is configured to suppress current concentration on specific elements caused by the variations of I-V characteristics between particle-shaped light emission diode elements by using such configurations that a resistance layer 120 is serially connected between a second electrode 119 and a second semiconductor 21p of each particle-shaped light emission diode element, and to prevent any damage because of current concentration on the elements whose Vd is the lowest, and a load to each element is reduced to thereby suppress the deterioration of the whole light emission device. Thus, it is possible to achieve an excellent device free from the variations of luminance. <P>COPYRIGHT: (C)2010,JPO&INPIT |
