| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon nitride film, which can be used as a charge storage layer with multiple traps, by a plasma CVD method. SOLUTION: A plasma CVD equipment 100 introduces a microwave into a treatment container 1 by a flat antenna 31 having multiple pores, wherein a pressure within the treatment container 1 is set within the limits of≥10 Pa and≤133.3 Pa, a high-frequency electric power is supplied from a high-frequency power source 9 to an electrode 7 of a placement table 2 for placing a wafer W with a power density within a range of≥0.009 W/cm<SP>2</SP>and≤0.64 W/cm<SP>2</SP>per area of the wafer W, and plasma CVD is performed using a silicon-containing compound gas and a film-forming gas containing a nitrogen gas while applying a radio frequency (RF) bias to the wafer W. COPYRIGHT: (C)2010,JPO&INPIT |
