| 摘要 |
PROBLEM TO BE SOLVED: To reduce a roll-off region without degrading throughput of the whole of wafer flattening work, in a multistage local dry etching method for correcting a thickness shape or surface shape of a semiconductor wafer. SOLUTION: In an outer periphery local dry etching process, a trajectory substantially extending along an outline of this region is used as a main scanning direction, a trajectory substantially orthogonal to the main scanning direction is used as a sub-scanning direction, and a short spatial wavelength component of a thickness shape or surface shape is corrected with respect to an outer periphery annular region A by using a small-diameter nozzle; and, in an inner local dry etching process, a linear trajectory is used as a main scanning direction, a linear trajectory orthogonal to the main scanning direction formed by the linear trajectory is used as a sub-scanning direction, correction of a large-wavelength component of a thickness shape or surface shape executed with respect to at least a region including an inner circular region inside the outer periphery annular region is executed by using a large-diameter nozzle having a diameter larger than that of the small-diameter nozzle. COPYRIGHT: (C)2010,JPO&INPIT
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