发明名称 |
Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal, solid-state laser, and solid-state light emitting apparatus |
摘要 |
A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.
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申请公布号 |
US2010091803(A1) |
申请公布日期 |
2010.04.15 |
申请号 |
US20090588462 |
申请日期 |
2009.10.16 |
申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
WATANABE KENJI;TANIGUCHI TAKASHI;KOIZUMI SATOSHI;KANDA HISAO;KATAGIRI MASAYUKI;YAMADA TAKATOSHI;MILOS NESLADEK |
分类号 |
H01S3/30;B01J3/06;C09K11/63;C30B29/38;H01J1/62;H01S5/323 |
主分类号 |
H01S3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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