发明名称 |
BORON NITRIDE AND BORON NITRIDE-DERIVED MATERIALS DEPOSITION METHOD |
摘要 |
Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.
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申请公布号 |
KR20100038311(A) |
申请公布日期 |
2010.04.14 |
申请号 |
KR20097026929 |
申请日期 |
2008.05.13 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
HUH, JEON GUK;BALSEANU MIHAELA;XIA LI QUN;NGUYEN VICTOR T.;WITTY DEREK R.;M'SAAD HICHEM |
分类号 |
H01L21/205;C01B21/064;H01L21/318 |
主分类号 |
H01L21/205 |
代理机构 |
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地址 |
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