| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device of a PoP (package-on-package) structure which can improve assembly yields of the semiconductor device associated with package warpage. <P>SOLUTION: The semiconductor device is formed by laminating a first substrate having a first core substrate with a first semiconductor element mounted thereon, and a second substrate having a second core substrate with a second semiconductor element mounted on a side of a surface of the first substrate, on which the first semiconductor element is mounted, and connecting the first substrate and second substrate through a solder bump. At least an upper part and side surface of the second semiconductor element are covered with a second sealing material. A ratio of an area (As2) of the second substrate in plane view and an area (Ac2) of the second semiconductor element in plane view (Ac2/As2) is 0.17-0.60. A ratio of a thickness (ts2) of the second substrate and a thickness (tc2) of the second semiconductor element (tc2/ts2) is 0.50-4.00. Modulus of elasticity of the second core substrate at normal temperature is 26 Gpa or more. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
