发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To suppress corrosion of a metal part, to suppress substrate contamination, to improve process quality and to improve yield. Ž<P>SOLUTION: A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft and connected to the process chamber via the first gas ejection port; a second gas ejection port formed at the substrate holder stage; a first gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and first gas stagnant parts. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010080922(A) 申请公布日期 2010.04.08
申请号 JP20090162263 申请日期 2009.07.08
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKADA TAKAYUKI;MATSUDA SATOYUKI;MORITA SHINYA
分类号 H01L21/205;C23C16/44;H01L21/22 主分类号 H01L21/205
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