| 摘要 |
A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on an active layer made of a nitride-based semiconductor, and an electrode layer including a first metal layer, made of Pt, formed on a far side of a surface of the nitride-based semiconductor layer from the active layer, a second metal layer, made of Pd, formed on a surface of the first metal layer, and a third metal layer, made of Pt, formed on a surface of the second metal layer, and having a shape necessary for the device in plan view. A thickness of the third metal layer is at least 10 times and not more than 30 times a thickness of the first metal layer.
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