<p>A method of making a device includes forming at least one anodizable metal layer over at least one of an electrode or a semiconductor device, forming a plurality of pores in the anodizable metal layer by anodization of the anodizable metal layer to expose a portion of the electrode or semiconductor device, and filling at least one pore with a rewritable material such that at least some of the rewritable material is in electrical contact with the electrode or semiconductor device.</p>
申请公布号
WO2010039568(A1)
申请公布日期
2010.04.08
申请号
WO2009US58151
申请日期
2009.09.24
申请人
SANDISK 3D LLC;XIAO, LI;ZHANG, JINGYAN;ZHONG, HUICAI