METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device for suppressing fluctuation in micro-processing of a memory cell. SOLUTION: A first layer 101 including a first opening OP1 and containing an ashable material is formed on a laminated layer SL including a charge accumulating layer and a gate electrode layer. A first side wall film 201 is formed to narrow the first opening OP1. The first layer 101 is ashed. The laminated layer SL is patterned to have a shape of flat surface corresponding to the shape of flat surface of the first side wall film 201. In the patterning process, etching is conducted using the first side wall film 201 as a mask. A diffused layer 70 is formed using the laminated layer SL as a mask. COPYRIGHT: (C)2010,JPO&INPIT