THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A thin film transistor and a manufacturing method thereof are provided to obtain the thin film having low leakage current and off current characteristics by forming a metal material on the surface of a channel. CONSTITUTION: A thin film transistor(TFT) comprises a gate(11), a gate isolation layer(12), a channel(14), a metal material(13), and a source(16a) / drain(16b). The gate isolation layer is included on the gate. The channel is formed in a position corresponding t o the gate of the gate insulation layer. The metal material is formed on the surface of the channel for crystallization of the channel. The source/drain is respectively touched with both sides of the channel.