发明名称 RESISTIVE MEMORY CELL AND METHOD FOR MANUFACTURING A RESISTIVE MEMORY CELL
摘要 A resistive memory cell includes a structural layer, a pore in the structural layer, a selector, having a coupling terminal accommodated in the pore, and a storage element of a resistive memory material, arranged in the pore and electrically coupled to the coupling terminal of the selector. The storage element has a tubular portion, extending transversely to an electrical coupling interface of the coupling terminal.
申请公布号 US2010078619(A1) 申请公布日期 2010.04.01
申请号 US20090570256 申请日期 2009.09.30
申请人 STMICROELECTRONICS S.R.L. 发明人 REDAELLI ANDREA;PELLIZZER FABIO;PIROVANO AGOSTINO
分类号 H01L45/00;H01L21/02 主分类号 H01L45/00
代理机构 代理人
主权项
地址