发明名称 |
Gallium nitride based light emitting diode |
摘要 |
A GaN-based LED comprises a substrate; an an-type GaN layer formed on the substrate; an active layer formed on a predetermined region of the n-type GaN layer; a p-type GaN layer formed on the active layer; a transparent electrode formed on the p-type GaN layer; a p-electrode formed on the transparent electrode; an n-type electrode formed on the n-type GaN layer on which the active layer is not formed; and a protective film formed on a resulting structure between the transparent electrode and the n-type electrode, the protective film being composed of a plasma-oxidized transparent layer.
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申请公布号 |
US7687821(B2) |
申请公布日期 |
2010.03.30 |
申请号 |
US20060647266 |
申请日期 |
2006.12.29 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
JEON DONG MIN;HAN JAE HO;KANG PIL GEUN |
分类号 |
H01L33/00;H01L33/12;H01L27/15;H01L31/12;H01L33/20;H01L33/32;H01L33/42 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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