| 摘要 |
This invention is to improve data retention properties of a nonvolatile memory cell having an ONO film. A first cavity is disposed, in a position between the nitride film serving as a charge storage film and a memory gate and below an end portion of the memory gate, adjacent to the upper oxide film. A second cavity is disposed, in a position between the nitride film and a substrate and below an end portion of the memory gate, adjacent to the bottom oxide film. These cavities are closed with sidewall spacers formed over the substrate along the sidewalls of the memory gate.
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