| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which suppresses occurrence of variations in dimension of a gate electrode, forming a thin gate electrode. SOLUTION: The method for manufacturing a semiconductor device includes a step for forming a gate electrode film 60 on a substrate 5, a step for forming a reflection preventing film 8 on the surface of gate electrode film, a step for forming a resist pattern 7 on the surface of reflection preventing film, a step in which a bias power is applied to the electrode for drawing ion in the plasma so that the etching rate in the resist pattern becomes 100Å/min or less, and the gas that is non-reactive to the resist pattern is used to generate plasma which is radiated to the resist pattern, a step for etching the reflection preventing film and the gate electrode with the resist pattern as a mask, and a step for removing the resist pattern and the reflection preventing film. COPYRIGHT: (C)2010,JPO&INPIT |
