发明名称 Method for producing polycrystalline silicon
摘要 This invention relates generally to the area of metallurgy and/ or chemistry and, more particularly, to the technologies and facilities for production of gaseous silicon tetrafluoride and polycrystalline silicon from gaseous silicon tetrafluoride. The technology for production of silicon tetrafluoride from fluorosilicic acid solution includes: generation of acid extract, extract washing, extract drying, extract decompounding, bubbling of unseparated gaseous silicon tetrafluoride and hydrogen fluoride flow through silicon dioxide. The technology of silicon production includes interreaction between gaseous silicon tetrafluoride and magnesium vapour with subsequent separation of the final product. Technical results is as follows: production of silicon with high purity level, increased output of the final product, improvement of environmental friendliness of production process, simplification of the technological process of silicon production, decreased prime cost of the final product.
申请公布号 AU2008271340(A8) 申请公布日期 2010.03.18
申请号 AU20080271340 申请日期 2008.08.15
申请人 ZAKRYTOE AKSIONERNOE OBSCHESTVO 'SOLAR SI' 发明人 ANDREY PAVLOVICH CHUKANOV;STELLA VALERIEVNA SMETANKINA;RUSLAN ALEKSEEVICH SHEVCHENKO;OLEG ALEXANDROVICH MANCHULYANTSEV;ALEXANDER YUREVICH VAKHRUSHIN
分类号 C01B33/033 主分类号 C01B33/033
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