| 摘要 |
PURPOSE: A manufacturing method of the semiconductor device has no bad effect, in which the semi-insulating film used for the high voltage-resistant of the semiconductor device, the internal pressure stabilization, the electric potential stabilization of electrode, the reduction of the internal pressure remains domain etc can be formed. CONSTITUTION: A manufacturing method of the semiconductor device comprises: a process forming the Al electrode on the P-type domain(100) a process of forming the inter-layer film consisting of when compared with al it is close with the Al electrode, Si and the material difficult to react(102) a process resist being spread in the inter-layer film, and of forming the predetermined resist pattern into the photo-mechanical process(104) a process etching the inter-layer film of the opening of the resist pattern, and of coming off resist(106) a process the inter-layer film is to mask after coming off resist and of doing the etching of the Al electrode(108) a process forming the semi-insulating film which contain Si on the inter-layer film(110) a process of doing the thermal process in order to improve the ohmic characteristic of P collector layer and collector electrode(112). |
