| 摘要 |
PURPOSE: A method for forming silicide is provided to prevent a delay in a silicide formation process by simultaneously performing a thermal treatment with multiple temperatures in one thermal treatment process. CONSTITUTION: A substrate including a gate and a source/drain is prepared(S1). A metal layer is formed on the upper side of the substrate (S2). Thermal treatment is performed on the upper side of the metal layer(S3). The temperature of the thermal treatment changes in a wide range. The gate and the source/drain react to the metal layer in order to form silicide. The part of the metal layer that is not reacted to the gate and the source/drain is removed (S4).
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