发明名称 DEPOSITION APPARATUS, AND DEPOSITION METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To form a film so that void does not remain inside a trench in filling the inside of the trench while using a treatment medium containing a material solved in a supercritical fluid. SOLUTION: The following steps are repeated: a first step of making a temperature increase speed of a backside 32 higher than that of a surface 31 of a substrate 30 during applying a first voltage to a heater 23; and a second step of making a temperature drop speed of the surface 31 than that of the backside 32 of the substrate 30 during applying a second voltage to the heater 23. Thus, a temperature gradient between the surface 31 and the backside 32 of the substrate 30 is increased to form a film on the surface 31 of the substrate 30. In this way, the difference is generated in the temperature change rate between the surface 31 and the backside 32 of the substrate 30, and the difference in temperature between the surface 31 of the substrate 30 and the backside 32 thereof is made larger. Accordingly, the deposition speed on the bottom of a groove 33 becomes higher than that of the opening side of the groove 33, and deposition is possible in an order from the bottom of the groove 33. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010056145(A) 申请公布日期 2010.03.11
申请号 JP20080216894 申请日期 2008.08.26
申请人 DENSO CORP 发明人 YAMADA HIDEO;WADO HIROYUKI;TAKEUCHI YUKIHIRO
分类号 H01L21/31;H01L21/76 主分类号 H01L21/31
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