| 摘要 |
<p>The semiconductor device is equipped with element wiring (2), element topmost layer wiring (4), a wiring layer (8-10), and bumps (7). The element wiring (2) is provided on a semiconductor substrate (1) that has a semiconductor device through an insulating layer (50). The element topmost layer wiring (4) is provided on the element wiring (2). The wiring layer (8-10) is equipped with a superconnect insulation layer (9) provided on the element topmost layer wiring (4), superconnect vias (8), and superconnect wiring (10). The bumps (7) are provided on the superconnect wiring (10). The element topmost layer wiring (4) is equipped with a signal pad (4s), a power source pad (4v), and a grounding pad (4g). The surface area of the signal pad (4s) is smaller than the surface area of the power source pad (4v) and the grounding pad (4g). Multiple superconnect vias (8) are provided for at least the power source pad (4v) or the grounding pad (4g).</p> |
