METHOD FOR FABRICATING A SEMICONDUCTOR ON INSULATOR SUBSTRATE WITH REDUCED SECCO DEFECT DENSITY

摘要

PURPOSE: A method for manufacturing a semiconductor-on-insulation substrate is provided to reduce the density of SECCO defects by lowering the density of an ion implantation and an oxidation temperature. CONSTITUTION: A pre-set division area is provided in a mono-crystalline source substrate. An atomic species is implanted with a dose of less than 2.3x10^16 atoms per cm^2. The source substrate is attached to a handle substrate(29) to form a source-handle combination. The device layer(41) of the source substrate is transferred on the handle substrate. A thinning operation for the device layer is performed at a temperature of 925 °C or less.