VERFAHREN ZUR HERSTELLUNG EINES QUASI-PHASENANPASSUNGSKRISTALLS UND QUASI-PHASENANPASSUNGSKRISTALL,申请号DE20036031083-传众专利搜索

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发明名称	VERFAHREN ZUR HERSTELLUNG EINES QUASI-PHASENANPASSUNGSKRISTALLS UND QUASI-PHASENANPASSUNGSKRISTALL
摘要
申请公布号	DE60331083(D1)	申请公布日期	2010.03.11
申请号	DE20036031083	申请日期	2003.09.18
申请人	NATIONAL INSTITUTE FOR MATERIALS SCIENCE, TSUKUBA	发明人	KURIMURA, SUNAO;HARADA, MASAKI
分类号	G02F1/37;G02F1/355	主分类号	G02F1/37
代理机构		代理人
主权项
地址

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