CHARGE STORAGE DEVICES AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A charge storage device and a method for manufacturing the same are provided to reduce the manufacturing cost of a memory device by forming a charge storage layer and a blocking insulation layer using an identical mixing gas. CONSTITUTION: A tunneling insulation layer(13) is formed on a substrate(11). A charge storage layer(15) is formed on the tunneling insulation layer and includes a first band gap energy. A blocking insulation layer(17) including a second band gap energy is formed on the charge storage layer. A control gate(19) is formed on the blocking insulation layer. The composition ratio of a mixing gas for the charge storage layer is different from the composition ratio for the blocking insulation layer.