| 摘要 |
A method of operating a nonvolatile memory device includes setting an initial cell current level, performing program and erase operations for each word line of a memory block, storing the cycling number of the program and erase operations, comparing the cycling number with a critical cycling number of the program and erase operations, lowering the initial cell current level when the cycling number are larger than the critical cycling number, and changing a program operation option based on the lowered initial cell current level
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