Compound semiconductor device and the fabricating method of the same

摘要

A GaN layer functions as an electron transit layer and is formed to exhibit, at least at a portion thereof, A/B ratio of 0.2 or less obtained by a photoluminescence measurement, where“A”is the light-emission intensity in the 500-600 nm band, and“B”is the light-emission intensity at the GaN band-edge.