MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To solve the problem that the influence of a diamagnetic field due to magnetic poles at both ends due to the thinning of an element and the magnetization of a memory layer becomes unstable, since the magnetization of a ferromagnetic layer that becomes the memory layer in a magnetic tunnel junction(MTJ) element for improving sensitivity by lamination is in the direction of the inside of a surface. SOLUTION: A closed magnetic path layer 16 is provided on a ferromagnetic layer 14 that becomes the memory layer of a laminated MTJ element 1, and the ferromagnetic layer 14 and a closed magnetic path layer 16 are jointed via metal layers 15 and 15' at both ends and are separated at a central part.