| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently improve a breakdown voltage while securing a path for a drain current. <P>SOLUTION: A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) 100 includes an N-type epitaxial layer (semiconductor layer), a P-type (second conductivity type) base region formed on the surface of the N-type epitaxial layer, a plurality of first P-type column regions 130 formed in a matrix form in plain view in the epitaxial layer, a trench gate 112 formed on a principal surface of the epitaxial layer, enclosing four sides of each of the first column regions 130 in plain view, and provided penetrating the base region to reach the epitaxial layer, and a plurality of second P-type column regions 132 formed selectively below the trench gate 112 in four corners where the trench gate 112 encloses each first column region 130. <P>COPYRIGHT: (C)2010,JPO&INPIT |
