发明名称 |
Method of measuring alignment of measurement pattern |
摘要 |
A resist pattern for alignment measurement being shrunk by a heat flow includes a plurality of positive type or negative type line patterns. Widths of spaces between the line patterns are greater than twice those of the line patterns. Alternatively, the resist pattern comprises a box-shaped or slit-shaped measurement pattern and a pair of box-shaped or slit-shaped auxiliary patterns provided inside and outside the measurement pattern, respectively.
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申请公布号 |
US7670922(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20060481059 |
申请日期 |
2006.07.06 |
申请人 |
OKI SEMICONDUCTOR CO., LTD. |
发明人 |
YUSA HIROYUKI;YANAGISAWA AZUSA;KIKUCHI TOSHIFUMI;MAKIUCHI AKIHIRO |
分类号 |
G03F7/20;H01L23/544;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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