发明名称 Method of measuring alignment of measurement pattern
摘要 A resist pattern for alignment measurement being shrunk by a heat flow includes a plurality of positive type or negative type line patterns. Widths of spaces between the line patterns are greater than twice those of the line patterns. Alternatively, the resist pattern comprises a box-shaped or slit-shaped measurement pattern and a pair of box-shaped or slit-shaped auxiliary patterns provided inside and outside the measurement pattern, respectively.
申请公布号 US7670922(B2) 申请公布日期 2010.03.02
申请号 US20060481059 申请日期 2006.07.06
申请人 OKI SEMICONDUCTOR CO., LTD. 发明人 YUSA HIROYUKI;YANAGISAWA AZUSA;KIKUCHI TOSHIFUMI;MAKIUCHI AKIHIRO
分类号 G03F7/20;H01L23/544;H01L21/027 主分类号 G03F7/20
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