| 摘要 |
PROBLEM TO BE SOLVED: To provide a single gate type bidirectional switching element in which a threshold voltage is kept low, a low on-resistance is realized and a restriction on the shape is alleviated. SOLUTION: The bidirectional switching element having a horizontal transistor structure includes: a first electrode D1 and a second electrode D2 formed on the surface of a substrate and serially connected to an AC power source and a load, respectively; a middle potential part S having a middle potential between the potential of the first electrode D1 and the potential of the second electrode D2 and at least a part formed on the surface 2d of a substrate 2; a control electrode G controlling the middle potential part S and having at least a part connected to the middle potential part S, wherein the middle potential part S and the control electrode G are placed so that a predetermined withstand voltage can be maintained against the first electrode D1 and the second electrode D2. COPYRIGHT: (C)2010,JPO&INPIT |
