| 摘要 |
<p>1,190,290. Semi-conductor devices. HITACHI Ltd. 26 Sept., 1968 [2 Oct., 1967], No. 45843/68. Heading H1K. A semi-conductor pellet is mounted on a metal member by placing a metal foil on the member, alloying the foil to the member in such a way that the exposed face of the foil is unalloyed, and alloying the semi-conductor pellet to the exposed face of the foil. As shown, Fig. 2, a Au-Sb foil 17 is placed on the flattened end 16 of a Ni or Ni-Fe lead 11a and resistance spot-welded so that the adjacent faces form an alloy layer 18. A silicon die 12, containing a transistor, is placed on the foil and the assembly is heated to alloy the die to the foil forming a Au-Si eutectic layer 19. This lead 11a forms the collector connection and similar leads (11b, 11c) are located on either side and connected to the emitter and base electrodes on the die by thin conductors welded into place. The assembly is then encapsulated in resin. The foil 17 may be of pure gold. The collector lead 11a may have a thin gold surface layer to facilitate connection to other components. The use of silver-plated leads is also mentioned.</p> |
