发明名称 CIRCUIT FOR GENERATING NEGATIVE VOLTAGE AND A SEMICONDUCTOR MEMORY APPARATUS USING THE SAME
摘要 A circuit for generating negative voltage includes a variable period oscillator configured to generate an oscillator signal enabled in response to a detection signal and to determine a period of the oscillator signal in response to a control signal, a pump configured to perform pumping operations in response to the oscillator signal and to generate a negative voltage by the pumping operations, a negative voltage detecting unit configured to detect the level of the negative voltage to generate the detection signal, and a gate-induced drain leakage current detecting unit configured to measure the amount of a gate-induced drain leakage current to generate the control signal.
申请公布号 US2010039166(A1) 申请公布日期 2010.02.18
申请号 US20080347366 申请日期 2008.12.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI HONG SOK
分类号 G05F1/10 主分类号 G05F1/10
代理机构 代理人
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