Method for high speed sensing for extra low voltage DRAM

摘要

A method and apparatus are provided for sensing in low voltage DRAM memory cells. A method according to one embodiment includes: providing a DRAM circuit having a memory cell, a sense amplifier including a pre-charge circuit connected to a first voltage source and a back-to-back inverter including a first and second NMOS transistor, each having a source and a first and second PMOS transistor, each having a source. The method further includes the steps of maintaining the voltage of the sources of the first and second NMOS transistors at a first voltage during normal operation and lowering the voltage of the sources of the first and second NMOS transistors from the first voltage to a second voltage during a read operation.