| 摘要 |
<P>PROBLEM TO BE SOLVED: To alleviate a concentration of an electric field on an inter-gate insulating film. Ž<P>SOLUTION: In a memory cell region M, an impurity is implanted into the surface layer of a semiconductor substrate 2 next to a polycrystal silicon layer constituting a floating gate electrode to form a diffusion layer 2a serving as a source/drain region. In a boundary region between a dummy region RD1 and a dummy region RD2, N-type impurity ions are not implanted into the surface layer of the semiconductor substrate 2 next to the polycrystal silicon layer constituting a dummy laminated gate electrode (region 2b). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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