| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an organic thin-film transistor that suppresses a leakage current in a gate insulation film, obtains high insulation film capacity, and is operated by a low gate voltage. Ž<P>SOLUTION: The organic thin-film transistor has a gate electrode 18, the gate insulation film 17, an organic semiconductor film 16, a drain electrode 14, and a source electrode 15 on a substrate 11. The gate insulation film 17 has a two-layer structure of low and high dielectric films 17a, 17b. The low dielectric film 17a is disposed between the high dielectric film 17b and the organic semiconductor film 16, and includes an organic high molecular compound having neither a functional group with a pair of unshared electrons nor π electron coupling in a molecular structure. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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