发明名称 |
CLEANING METHOD BY ELECTROLYTIC SULFURIC ACID AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a cleaning method by electrolytic sulfuric acid improved in the current efficiency for producing the electrolytic sulfuric acid, and enhancing cleaning/peeling efficiency of resist or the like at the same time; and to provide a method of manufacturing a semiconductor device. <P>SOLUTION: The cleaning method by electrolytic sulfuric acid includes steps of: supplying a first sulfuric acid solution from outside to a sulfuric acid electrolysis tank 1 to perform electrolysis to produce a first electrolytic sulfuric acid containing an oxidizing substance in the sulfuric acid electrolysis tank 1; supplying a second sulfuric acid solution, which is higher in concentration than the first sulfuric acid solution previously supplied, from the outside to the sulfuric acid electrolysis tank 1 to mix the second sulfuric acid with the first electrolytic sulfuric acid in the sulfuric acid electrolysis tank 1, and performing electrolysis to produce a cleaning solution comprising a second electrolytic sulfuric acid containing sulfuric acid and an oxidizing substance in the sulfuric acid electrolysis tank 1; and performing a cleaning treatment for a cleaning object 23 by using the cleaning solution. The method of manufacturing a semiconductor device using the cleaning method is also provided. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
申请公布号 |
JP2010034521(A) |
申请公布日期 |
2010.02.12 |
申请号 |
JP20090139821 |
申请日期 |
2009.06.11 |
申请人 |
CHLORINE ENG CORP LTD;TOSHIBA CORP;SHIBAURA MECHATRONICS CORP |
发明人 |
DOMON HIROKI;OGAWA YUSUKE;KATO MASAAKI;KISHI TAKEMICHI;HAYAMIZU NAOYA;TAYA MAKIKO;KUROKAWA SADAAKI;KOBAYASHI NOBUO |
分类号 |
H01L21/304;C25B1/30;C25B11/12;H01L21/027 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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