MG-CONTAINING ZNO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS

摘要

Disclosed is an Mg-containing ZnO mixed single crystal, which is characterized by containing an Mg-containing ZnO semiconductor having a band gap (Eg) satisfying 3.30 eV < Eg <= 3.54 eV and having a film thickness of not less than 5μm. Also disclosed is a method for producing an Mg-containing ZnO mixed single crystal by liquid-phase epitaxial growth, which is characterized in that an Mg-containing ZnO mixed single crystal is grown on a substrate by mixing and melting ZnO and MgO as solutes and PbO and BiO(or alternatively, PbFand PbO) as solvents together, and then bringing a substrate into direct contact with the thus-obtained melt.