发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A p-type region is provided on a first n-type region. A second n-type region is provided on the p-type region, spaced apart from the first n-type region by the p-type region. A gate electrode serves to form an n-channel between the first and second n-type regions. A first electrode is electrically connected to each of the p-type region and the second n-type region. A second electrode is provided on the first n-type region such that it is spaced apart from the p-type region by the first n-type region and at least a part thereof is in contact with the first n-type region. The second electrode is made of any of metal and alloy and serves to inject holes into the first n-type region.
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申请公布号 |
US2010032711(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20080344947 |
申请日期 |
2008.12.29 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
AONO SHINJI;MORITANI JUNICHI |
分类号 |
H01L29/739;H01L21/331 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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