发明名称 |
Semiconductor device and method of forming stepped-down RDL and recessed THV in peripheral region of the device |
摘要 |
A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.
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申请公布号 |
US7659145(B2) |
申请公布日期 |
2010.02.09 |
申请号 |
US20080172817 |
申请日期 |
2008.07.14 |
申请人 |
STATS CHIPPAC, LTD. |
发明人 |
DO BYUNG TAI;KUAN HEAP HOE;PAGAILA REZA A.;CHUA LINDA PEI EE |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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