发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which applies a desired signal (gate drive signal) to the gate of a power device by suppressing the effect of electromagnetic induction and gate oscillation. <P>SOLUTION: The semiconductor device comprises the power device arranged on a base board, a gate drive signal input terminal, an emitter sensing terminal, a drive signal transmission wiring made of metal plate which connects the gate of power device to the gate drive signal input terminal, and an emitter sensing wiring of metal plate which connects the emitter of power device to the emitter sensing terminal. The drive signal transmission wiring and the emitter sensing wiring are arranged parallel to the base board. The drive signal transmission wiring and the emitter sensing wiring comprise superposed regions where they overlap each other without contacting to each other. In the superposed region, the direction of current flow in the drive sinal transmission wiring is opposite to that of the emitter sensing wiring. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010027691(A) 申请公布日期 2010.02.04
申请号 JP20080184091 申请日期 2008.07.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 HASEGAWA SHIGERU
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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